Okuhlosiwe kunemiphumela eminingi, futhi indawo yokuthuthukiswa kwemakethe inkulu.Iwusizo kakhulu emikhakheni eminingi.Cishe yonke imishini emisha yokukhipha amanzi isebenzisa odonsa abanamandla kuma-electron asonge ukuze kusheshiswe i-ionization ye-argon eduze kwalapho okuhlosiwe, okuholela ekwandeni kwamathuba okushayisana phakathi kwethagethi nama-argon ions.Manje ake sibheke indima yethagethi ye-sputtering ku-vacuum coating.
Thuthukisa izinga lokufafaza.Ngokuvamile, i-DC sputtering isetshenziselwa ukuhlanganisa insimbi, kuyilapho i-RF AC sputtering isetshenziselwa izinto ezingezona ze-ceramic kazibuthe.Isimiso esibalulekile ukusebenzisa ukukhishwa okukhazimulayo ukuze ushaye ama-ion e-argon (AR) ebusweni bethagethi ku-vacuum, futhi ama-cations ku-plasma azosheshisa ukugijimela endaweni engalungile ye-electrode njengento efafaziwe.Lo mthelela uzokwenza impahla yethagethi indize iphume futhi ifake ku-substrate ukuze yenze ifilimu.
Ngokuvamile, kunezici eziningana zokumbozwa kwefilimu ngenqubo yokufafaza: (1) insimbi, i-alloy noma isivikelo singenziwa sibe idatha yefilimu.
(2) Ngaphansi kwezimo ezifanele zokusetha, ifilimu enokwakheka okufanayo ingenziwa ngezinto ezihlosiwe eziningi nezingahlelekile.
(3) Ingxube noma inhlanganisela yezinto eziqondiwe kanye nama-molecule egesi ingakhiqizwa ngokwengeza umoya-mpilo noma amanye amagesi asebenzayo emkhathini wokuphuma.
(4) Isikhathi samanje sokufakwayo okuhlosiwe kanye nesikhathi sokufafaza singalawulwa, futhi kulula ukuthola ukujiya kwefilimu okunembe kakhulu.
(5) Uma kuqhathaniswa nezinye izinqubo, kuyasiza ekukhiqizweni kwamafilimu omfaniswano wendawo enkulu.
(6) Izinhlayiya ezihlakazekile cishe azithintwa amandla adonsela phansi, futhi izindawo lapho okuqondiwe khona kanye ne-substrate ingahlelwa ngokukhululeka.
Isikhathi sokuthumela: May-17-2022