Ingahlukaniswa i-DC magnetron sputtering kanye ne-RF magnetron sputtering.
Indlela ye-DC sputtering idinga ukuthi ilitshe likwazi ukudlulisa imali ekhokhwayo etholwe enqubweni ye-ion bombardment iye ku-cathode esondelene nayo, bese le ndlela ingakwazi ukuphalaza kuphela idatha yomqhubi, engafaneleki idatha yokuhlukanisa, ngoba ukushaja kwe-ion kungaphezulu akukwazi ukuncishiswa lapho kuqhunyiswa i-insulation target, okuzoholela ekwandeni kwamandla endaweni okuhlosiwe, futhi cishe wonke amandla kagesi asetshenzisiwe asetshenziswa ekuhlosweni, ngakho-ke amathuba okusheshisa kwe-ion kanye ne-ionization phakathi Izigxobo ezimbili zizoncishiswa, noma azikwazi ukufakwa i-ionized, Kuholela ekuhlulekeni kokukhipha okuqhubekayo, ngisho nokuphazamiseka kokukhipha kanye nokuphazanyiswa kwe-sputtering.Ngakho-ke, i-radio frequency sputtering (RF) kufanele isetshenziselwe ukuvikela okuhlosiwe noma okungezona ezensimbi okune-conductivity embi.
Inqubo ye-sputtering ihilela izinqubo eziyinkimbinkimbi zokuhlakazeka kanye nezinqubo ezihlukahlukene zokudlulisa amandla: okokuqala, izinhlayiya zesigameko zishayisana ngokunwebeka nama-athomu okuhlosiwe, futhi ingxenye yamandla e-kinetic ezinhlayiya zesigameko izodluliselwa kuma-athomu okuhlosiwe.Amandla e-kinetic kwamanye ama-athomu aqondiwe adlula umgoqo ongaba khona owenziwe ngamanye ama-athomu azungezile (i-5-10ev yezinsimbi), abese ekhishwa ku-lattice lattice ukuze akhiqize ama-athomu angekho endaweni, Nokuqhubeka nokushayisana okuphindaphindiwe nama-athomu aseduze. , okubangele ukushayisana.Uma lokhu kugobhoza kwengozi kufinyelela endaweni okuhlosiwe, uma amandla e-kinetic ama-athomu aseduze nendawo okuqondiwe emakhulu kunamandla okubopha angaphezulu (1-6ev wezinsimbi), lawa ma-athomu azohlukana nendawo eqondiwe. bese ufaka ivacuum.
I-Sputtering coating ikhono lokusebenzisa izinhlayiya ezishajiwe ukuze kuqhume ingaphezulu lethagethi ku-vacuum ukwenza izinhlayiya eziqhunyiswa ngamabhomu zinqwabelane ku-substrate.Ngokuvamile, ukukhishwa kokukhanya kwegesi okunengcindezi ephansi kusetshenziselwa ukukhiqiza ama-ion esigameko.Ithagethi ye-cathode yenziwe ngezinto zokumboza, i-substrate isetshenziswa njenge-anode, i-0.1-10pa argon noma enye igesi ye-inert ingeniswa egumbini le-vacuum, futhi ukukhishwa okukhanyayo kwenzeka ngaphansi kwesenzo se-cathode (okuhlosiwe) 1-3kv DC ephezulu engalungile. voltage noma 13.56MHz RF voltage.Ama-argon ions ane-ionized abhomba phezu kwendawo eqondiwe, abangele ama-athomu okuqondiwe ukuthi achaphaze futhi anqwabelene ku-substrate ukuze akhe ifilimu elincanyana.Njengamanje, ziningi izindlela zokufafaza, ikakhulukazi ezihlanganisa ukuphafaza kwesibili, ukuphalaza kwamabanga aphezulu noma kwe-quaternary, ukuphalaza kwe-magnetron, ukuphafaza okuqondiwe, ukuphalaza kwe-RF, ukuphalaza okuchemile, ukuphalaza kwe-asymmetric kwe-RF, ukuphafaza kwe-ion beam kanye nokuphendula okusebenzayo.
Ngenxa yokuthi ama-athomu ahlakazekile aphumela ngaphandle ngemva kokushintshanisa amandla e-kinetic nama-ion alungile namashumi amandla e-electron volts, ama-athomu ahlakazekile anamandla amakhulu, asiza ekuthuthukiseni ikhono lokuhlakazeka lama-athomu ngesikhathi sokunqwabelanisa, ukwenza ngcono ukuhleleka kokunqwabelanisa, nokwenza. ifilimu elungiselelwe ine-adhesion eqinile ne-substrate.
Phakathi ne-sputtering, ngemva kokuba igesi i-ionized, ama-ion egesi andizela endaweni ehlosiwe exhunywe ku-cathode ngaphansi kwesenzo sensimu kagesi, futhi ama-electron andizela emgodini odongeni ophansi kanye ne-substrate.Ngale ndlela, ngaphansi kwe-voltage ephansi kanye nengcindezi ephansi, inani lama-ion lincane futhi amandla okufafaza okuhlosiwe aphansi;Ku-voltage ephezulu kanye nokucindezela okuphezulu, nakuba ama-ion amaningi engenzeka, ama-electron andizela ku-substrate anamandla aphezulu, okulula ukushisa i-substrate ngisho ne-sputtering yesibili, okuthinta ikhwalithi yefilimu.Ngaphezu kwalokho, amathuba okushayisana phakathi kwama-athomu okuhlosiwe nama-molecule egesi ngesikhathi endizela ku-substrate nawo anda kakhulu.Ngakho-ke, izohlakazeka kuwo wonke umgodi, ongeke nje uchithe okuhlosiwe, kodwa futhi ungcolise ungqimba ngalunye ngesikhathi sokulungiswa kwamafilimu amaningi.
Ukuze kuxazululwe lezi phutha ezingenhla, ubuchwepheshe be-DC magnetron sputtering bathuthukiswa ngeminyaka yawo-1970.Inqoba ngempumelelo ukushiyeka kwesilinganiso esiphansi se-cathode sputtering kanye nokwanda kwezinga lokushisa le-substrate elibangelwa ama-electron.Ngakho-ke, iye yathuthukiswa ngokushesha futhi isetshenziswa kabanzi.
Isimiso simi kanje: ku-magnetron sputtering, ngenxa yokuthi ama-electron ahambayo angaphansi kwamandla ka-Lorentz emkhakheni kazibuthe, umjikelezo wawo wokunyakaza uzoba ukunyakaza okuhlukumezayo noma okuvunguzayo, futhi indlela yawo yokunyakaza izoba yinde.Ngakho-ke, inani lokushayisana nama-molecule egesi asebenzayo liyakhula, ukuze ukuminyana kwe-plasma kwande, bese izinga lokuphambanisa kwe-magnetron lithuthukiswa kakhulu, futhi lingasebenza ngaphansi kwe-voltage ephansi ye-sputtering nengcindezi yokunciphisa ukuthambekela kokungcoliswa kwefilimu;Ngakolunye uhlangothi, iphinde ithuthukise amandla esigameko se-athomu ebusweni be-substrate, ngakho ikhwalithi yefilimu ingathuthukiswa kakhulu.Ngesikhathi esifanayo, lapho ama-electron alahlekelwa amandla ngokusebenzisa ukungqubuzana okuningi efinyelela i-anode, abe ama-electron aphansi, bese i-substrate ingeke idlulele.Ngakho-ke, i-magnetron sputtering inezinzuzo "zejubane eliphezulu" kanye "nokushisa okuphansi".Ububi bale ndlela ukuthi ifilimu yesivikelo asikwazi ukulungiswa, futhi inkambu kazibuthe engalingani esetshenziswa ku-electrode kazibuthe izobangela ukuqoshwa okusobala kokungalingani kwethagethi, okuholela ekusetshenzisweni okuphansi kwezinga elihlosiwe, ngokuvamile elingu-20% - 30 kuphela. %.
Isikhathi sokuthumela: May-16-2022